DD1000S33HE3BOSA1 Infineon Technologies

Description: DIODE MODULE GP 3300V AGIHVB1303, Current - Reverse Leakage @ Vr: 1000 A @ 1800 V, Voltage - Forward (Vf) (Max) @ If: 3.85 V @ 1000 A, Voltage - DC Reverse (Vr) (Max): 3300 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: AG-IHVB130-3, Current - Average Rectified (Io) (per Diode): 1000A (DC), Diode Configuration: 2 Independent, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.