DD104N12KHPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1.2KV 104A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Module
Current - Average Rectified (Io) (per Diode): 104A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details DD104N12KHPSA1 Infineon Technologies
Description: DIODE MODULE GP 1.2KV 104A, Current - Reverse Leakage @ Vr: 20 mA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: Module, Current - Average Rectified (Io) (per Diode): 104A, Diode Configuration: 1 Pair Common Cathode, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.