DD1200S17H4B2BOSA2 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE MODULE GP 1700V AGIHMB1301
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHMB130-1
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 1200 A
Current - Reverse Leakage @ Vr: 1250 A @ 900 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1371.43 EUR |
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Technische Details DD1200S17H4B2BOSA2 Infineon Technologies
Description: DIODE MODULE GP 1700V AGIHMB1301, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Supplier Device Package: AG-IHMB130-1, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 1200 A, Current - Reverse Leakage @ Vr: 1250 A @ 900 V.
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DD1200S17H4B2BOSA2 | Hersteller : Infineon Technologies |
Diode 1.7KV 1.2KA 4-Pin IHMB130-1 Tray |
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