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DD1200S33K2CB3S2NDSA1

DD1200S33K2CB3S2NDSA1 Infineon Technologies

DD1200S33K2C.pdf
Hersteller: Infineon Technologies
Description: DIODE MOD GP 3300V 1200A AIHV130
Current - Reverse Leakage @ Vr: 1700 A @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 3300 V
Operating Temperature - Junction: -40°C ~ 125°C
Supplier Device Package: A-IHV130-3
Current - Average Rectified (Io) (per Diode): 1200A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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Technische Details DD1200S33K2CB3S2NDSA1 Infineon Technologies

Description: DIODE MOD GP 3300V 1200A AIHV130, Current - Reverse Leakage @ Vr: 1700 A @ 1800 V, Voltage - Forward (Vf) (Max) @ If: 3.5 V @ 1200 A, Voltage - DC Reverse (Vr) (Max): 3300 V, Operating Temperature - Junction: -40°C ~ 125°C, Supplier Device Package: A-IHV130-3, Current - Average Rectified (Io) (per Diode): 1200A (DC), Diode Configuration: 2 Independent, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.