DD800S17H4B2BOSA2 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: DIODE MODULE GP 1700V AGIHMB1301
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Supplier Device Package: AG-IHMB130-1
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 800 A
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1346.17 EUR |
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Technische Details DD800S17H4B2BOSA2 Infineon Technologies
Description: DIODE MODULE GP 1700V AGIHMB1301, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Diode Configuration: 2 Independent, Supplier Device Package: AG-IHMB130-1, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 800 A.
Weitere Produktangebote DD800S17H4B2BOSA2 nach Preis ab 1555.58 EUR bis 1555.58 EUR
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DD800S17H4B2BOSA2 | Hersteller : Infineon Technologies |
Description: DIODE MODULE GP 1700V AGIHMB1301 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Supplier Device Package: AG-IHMB130-1 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 800 A |
auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) |
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DD800S17H4B2BOSA2 | Hersteller : Infineon Technologies |
High Insulated Diode Module |
Produkt ist nicht verfügbar |