DDB6U104N16RRPB37B INFINEON TECHNOLOGIES

Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.6kV; 350W, Collector current: 50A, Topology: boost chopper; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT, Power dissipation: 350W, Technology: EconoBRIDGE™, Mechanical mounting: screw, Pulsed collector current: 100A, Max. off-state voltage: 1.6kV, Electrical mounting: Press-in PCB, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V.