DDB6U75N16W1RB11BOMA1 Infineon Technologies

Description: IGBT MOD 1200V 69A 335W, Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 335 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 69 A, Part Status: Active, IGBT Type: Trench Field Stop, Supplier Device Package: Module, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A, Operating Temperature: -40°C ~ 150°C, Configuration: Three Phase Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.