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DDC114EUQ-7-F

DDC114EUQ-7-F Diodes Incorporated


DDC_XXXX_U.pdf Hersteller: Diodes Incorporated
Description: PREBIAS TRANSISTOR SOT363 T&R 3K
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
15000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DDC114EUQ-7-F Diodes Incorporated

Description: PREBIAS TRANSISTOR SOT363 T&R 3K, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 200mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DDC114EUQ-7-F nach Preis ab 0.15 EUR bis 0.60 EUR

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DDC114EUQ-7-F DDC114EUQ-7-F Hersteller : Diodes Incorporated DDC_XXXX_U.pdf Description: PREBIAS TRANSISTOR SOT363 T&R 3K
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 200mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.60 EUR
48+0.37 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
DDC114EUQ-7-F DDC114EUQ-7-F Hersteller : Diodes Inc ds30345.pdf Trans Digital BJT NPN 50V 100mA 200mW Automotive 6-Pin SOT-363 T/R
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DDC114EUQ-7-F Hersteller : DIODES INCORPORATED DDC_XXXX_U.pdf DDC114EUQ-7-F NPN SMD transistors
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DDC114EUQ-7-F Hersteller : Diodes Incorporated ds30345-1512281.pdf Bipolar Transistors - BJT Prebias Transistor SOT363 T&R 3K
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