Produkte > DIODES INCORPORATED > DDTA144GCA-7-F
DDTA144GCA-7-F

DDTA144GCA-7-F Diodes Incorporated


ds30336.pdf Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 210000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.063 EUR
6000+ 0.058 EUR
9000+ 0.048 EUR
30000+ 0.047 EUR
75000+ 0.042 EUR
150000+ 0.037 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details DDTA144GCA-7-F Diodes Incorporated

Description: TRANS PREBIAS PNP 200MW SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Emitter Base (R2): 47 kOhms.

Weitere Produktangebote DDTA144GCA-7-F nach Preis ab 0.039 EUR bis 0.38 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DDTA144GCA-7-F DDTA144GCA-7-F Hersteller : Diodes Incorporated ds30336.pdf Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 47 kOhms
auf Bestellung 210068 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
48+0.37 EUR
69+ 0.26 EUR
142+ 0.12 EUR
500+ 0.1 EUR
1000+ 0.072 EUR
Mindestbestellmenge: 48
DDTA144GCA-7-F DDTA144GCA-7-F Hersteller : Diodes Incorporated ds30336.pdf Bipolar Transistors - Pre-Biased 200MW 47K
auf Bestellung 2985 Stücke:
Lieferzeit 206-210 Tag (e)
Anzahl Preis ohne MwSt
8+0.38 EUR
12+ 0.25 EUR
100+ 0.16 EUR
1000+ 0.072 EUR
3000+ 0.055 EUR
9000+ 0.046 EUR
24000+ 0.039 EUR
Mindestbestellmenge: 8
DDTA144GCA-7-F DDTA144GCA-7-F Hersteller : Diodes Incorporated ds30336.pdf Description: TRANS PREBIAS PNP 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar