Produkte > DIODES INC > DDTB123YU-7-F
DDTB123YU-7-F

DDTB123YU-7-F Diodes Inc


ds30383.pdf Hersteller: Diodes Inc
Trans Digital BJT PNP 50V 500mA 200mW 3-Pin SOT-323 T/R
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details DDTB123YU-7-F Diodes Inc

Description: TRANS PREBIAS PNP 50V SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Supplier Device Package: SOT-323, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms.

Weitere Produktangebote DDTB123YU-7-F

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DDTB123YU-7-F DDTB123YU-7-F Hersteller : Diodes Incorporated DDTB_XXXX_U.pdf Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
DDTB123YU-7-F Hersteller : Diodes Incorporated ds30383-19928.pdf Bipolar Transistors - Pre-Biased 200MW 2.2K 10K
Produkt ist nicht verfügbar