DDTB143EU-7-F Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 177000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.091 EUR |
| 6000+ | 0.085 EUR |
| 9000+ | 0.07 EUR |
| 30000+ | 0.069 EUR |
| 75000+ | 0.062 EUR |
| 150000+ | 0.054 EUR |
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Technische Details DDTB143EU-7-F Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V, Supplier Device Package: SOT-323, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.
Weitere Produktangebote DDTB143EU-7-F nach Preis ab 0.094 EUR bis 0.8 EUR
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DDTB143EU-7-F | Hersteller : Diodes Incorporated |
Description: TRANS PREBIAS PNP 50V SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms |
auf Bestellung 177000 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTB143EU-7-F | Hersteller : Diodes Incorporated |
Bipolar Transistors - Pre-Biased 200MW 4.7K |
auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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DDTB143EU-7-F | Hersteller : Diodes Inc |
Trans Digital BJT PNP 50V 500mA 200mW 3-Pin SOT-323 T/R |
Produkt ist nicht verfügbar |
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DDTB143EU-7-F | Hersteller : DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT323 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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DDTB143EU-7-F | Hersteller : DIODES INCORPORATED |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 4.7kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.2W Case: SOT323 Current gain: 100...600 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
Produkt ist nicht verfügbar |