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DDTB143EU-7-F

DDTB143EU-7-F Diodes Incorporated

DDTB_XXXX_U.pdf
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 189000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.085 EUR
6000+0.076 EUR
9000+0.072 EUR
15000+0.067 EUR
21000+0.064 EUR
30000+0.061 EUR
75000+0.055 EUR
150000+0.051 EUR
Mindestbestellmenge: 3000
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Technische Details DDTB143EU-7-F Diodes Incorporated

Description: TRANS PREBIAS PNP 50V SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V, Supplier Device Package: SOT-323, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Resistors Included: R1 and R2.

Weitere Produktangebote DDTB143EU-7-F nach Preis ab 0.1 EUR bis 0.65 EUR

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DDTB143EU-7-F DDTB143EU-7-F Hersteller : Diodes Incorporated DDTB_XXXX_U.pdf Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 47 @ 50mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 191465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
70+0.25 EUR
113+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
DDTB143EU-7-F DDTB143EU-7-F Hersteller : Diodes Incorporated DDTB_XXXX_U.pdf Digital Transistors 200MW 4.7K
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.65 EUR
10+0.45 EUR
100+0.29 EUR
500+0.18 EUR
1000+0.16 EUR
3000+0.14 EUR
6000+0.12 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DDTB143EU-7-F DDTB143EU-7-F Hersteller : DIODES INCORPORATED DDTB_XXXX_U.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 500mA; 200mW; SOT323; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT323
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 100...600
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
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Im Einkaufswagen  Stück im Wert von  UAH