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DDTC113ZE-7-F

DDTC113ZE-7-F Diodes Incorporated

ds30314.pdf Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 609000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.095 EUR
6000+ 0.088 EUR
9000+ 0.073 EUR
30000+ 0.072 EUR
75000+ 0.065 EUR
150000+ 0.056 EUR
Mindestbestellmenge: 3000
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Technische Details DDTC113ZE-7-F Diodes Incorporated

Description: TRANS PREBIAS NPN 50V SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V, Supplier Device Package: SOT-523, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms.

Weitere Produktangebote DDTC113ZE-7-F nach Preis ab 0.11 EUR bis 0.56 EUR

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DDTC113ZE-7-F DDTC113ZE-7-F Hersteller : Diodes Incorporated ds30314.pdf Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 5mA, 5V
Supplier Device Package: SOT-523
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 612185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
32+0.56 EUR
46+ 0.39 EUR
100+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 32
DDTC113ZE-7-F DDTC113ZE-7-F Hersteller : Diodes Inc ds30314.pdf Trans Digital BJT NPN 50V 100mA 150mW 3-Pin SOT-523 T/R
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DDTC113ZE-7-F DDTC113ZE-7-F Hersteller : Diodes Incorporated ds30314.pdf Bipolar Transistors - Pre-Biased 150MW 1K 10K
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