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DDTC115GCA-7-F

DDTC115GCA-7-F Diodes Incorporated

ds30332.pdf
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 156000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.07 EUR
6000+0.063 EUR
9000+0.06 EUR
15000+0.056 EUR
21000+0.054 EUR
30000+0.051 EUR
75000+0.046 EUR
150000+0.043 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DDTC115GCA-7-F Diodes Incorporated

Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Emitter Base (R2): 100 kOhms.

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Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
DDTC115GCA-7-F DDTC115GCA-7-F Diodes Incorporated ds30332.pdf Digital Transistors 200MW 100K
auf Bestellung 714 Stücke:
Lieferzeit 10-14 Tag (e)
14+0.25 EUR
19+0.18 EUR
100+0.092 EUR
1000+0.082 EUR
3000+0.061 EUR
9000+0.05 EUR
24000+0.046 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTC115GCA-7-F DDTC115GCA-7-F Diodes Incorporated ds30332.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 154583 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
120+0.18 EUR
178+0.12 EUR
500+0.089 EUR
1000+0.08 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTC115GCA-7-F DDTC115GCA-7-F Diodes Incorporated ds30332.pdf Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 156000 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
114+0.18 EUR
172+0.12 EUR
500+0.093 EUR
1000+0.083 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTC115GCA-7-F ds30332.pdf
DDTC115GCA-7-F
Hersteller: Diodes Incorporated
Digital Transistors 200MW 100K
auf Bestellung 714 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+0.25 EUR
19+0.18 EUR
100+0.092 EUR
1000+0.082 EUR
3000+0.061 EUR
9000+0.05 EUR
24000+0.046 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTC115GCA-7-F ds30332.pdf
DDTC115GCA-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 154583 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
120+0.18 EUR
178+0.12 EUR
500+0.089 EUR
1000+0.08 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTC115GCA-7-F ds30332.pdf
DDTC115GCA-7-F
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Emitter Base (R2): 100 kOhms
auf Bestellung 156000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
114+0.18 EUR
172+0.12 EUR
500+0.093 EUR
1000+0.083 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH