Produkte > DIODES INCORPORATED > DDTC123EE-7-F

DDTC123EE-7-F Diodes Incorporated


ds30313.pdf
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Tape & Reel (TR)
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.095 EUR
6000+0.086 EUR
9000+0.081 EUR
15000+0.075 EUR
21000+0.072 EUR
30000+0.069 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DDTC123EE-7-F Diodes Incorporated

Description: TRANS PREBIAS NPN 50V SOT523, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-523, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-523, Packaging: Tape & Reel (TR).

Weitere Produktangebote DDTC123EE-7-F nach Preis ab 0.11 EUR bis 0.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DDTC123EE-7-F DDTC123EE-7-F Diodes Incorporated ds30313.pdf Description: TRANS PREBIAS NPN 50V SOT523
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
auf Bestellung 48025 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
65+0.27 EUR
104+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DDTC123EE-7-F ds30313.pdf
Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 2.2 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 250 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-523
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SOT-523
Packaging: Cut Tape (CT)
auf Bestellung 48025 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
39+0.46 EUR
65+0.27 EUR
104+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 39 Stücke
Im Einkaufswagen  Stück im Wert von  UAH