DDTC123EE-7-F Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: TRANS PREBIAS NPN 50V SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.10 EUR |
| 6000+ | 0.09 EUR |
| 9000+ | 0.08 EUR |
| 15000+ | 0.08 EUR |
| 21000+ | 0.07 EUR |
| 30000+ | 0.07 EUR |
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Technische Details DDTC123EE-7-F Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V, Supplier Device Package: SOT-523, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote DDTC123EE-7-F nach Preis ab 0.11 EUR bis 0.46 EUR
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DDTC123EE-7-F | Hersteller : Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Supplier Device Package: SOT-523 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
auf Bestellung 48025 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTC123EE-7-F | Hersteller : Diodes Inc |
Trans Digital BJT NPN 50V 100mA 150mW 3-Pin SOT-523 T/R |
Produkt ist nicht verfügbar |
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| DDTC123EE-7-F | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Quantity in set/package: 3000pcs. Current gain: 20 Frequency: 250MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DDTC123EE-7-F | Hersteller : Diodes Incorporated |
Bipolar Transistors - Pre-Biased PRE-BIAS NPN 150mW |
Produkt ist nicht verfügbar |
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| DDTC123EE-7-F | Hersteller : DIODES INCORPORATED |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT523; 2.2kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT523 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Quantity in set/package: 3000pcs. Current gain: 20 Frequency: 250MHz |
Produkt ist nicht verfügbar |