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DDTC123EE-7-F

DDTC123EE-7-F Diodes Incorporated

ds30313.pdf Hersteller: Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.095 EUR
6000+0.086 EUR
9000+0.081 EUR
15000+0.075 EUR
21000+0.072 EUR
30000+0.069 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DDTC123EE-7-F Diodes Incorporated

Description: TRANS PREBIAS NPN 50V SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V, Supplier Device Package: SOT-523, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, Resistors Included: R1 and R2.

Weitere Produktangebote DDTC123EE-7-F nach Preis ab 0.11 EUR bis 0.46 EUR

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DDTC123EE-7-F DDTC123EE-7-F Hersteller : Diodes Incorporated ds30313.pdf Description: TRANS PREBIAS NPN 50V SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Resistors Included: R1 and R2
auf Bestellung 48025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
65+0.27 EUR
104+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
DDTC123EE-7-F DDTC123EE-7-F Hersteller : Diodes Inc ds30313.pdf Trans Digital BJT NPN 50V 100mA 150mW 3-Pin SOT-523 T/R
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DDTC123EE-7-F DDTC123EE-7-F Hersteller : Diodes Incorporated ds30313.pdf Digital Transistors PRE-BIAS NPN 150mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH