DDTD123EC-7-F Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.085 EUR |
| 6000+ | 0.079 EUR |
| 9000+ | 0.065 EUR |
| 30000+ | 0.064 EUR |
| 75000+ | 0.058 EUR |
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Technische Details DDTD123EC-7-F Diodes Incorporated
Description: TRANS PREBIAS NPN 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms.
Weitere Produktangebote DDTD123EC-7-F nach Preis ab 0.06 EUR bis 0.51 EUR
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DDTD123EC-7-F | Hersteller : Diodes Incorporated |
Digital Transistors 200MW 2.2K |
auf Bestellung 6157 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTD123EC-7-F | Hersteller : Diodes Incorporated |
Description: TRANS PREBIAS NPN 50V SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 130227 Stücke: Lieferzeit 10-14 Tag (e) |
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DDTD123EC-7-F | Hersteller : Diodes Inc |
Trans Digital BJT NPN 40V 500mA 200mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DDTD123EC-7-F | Hersteller : Diodes Zetex |
Trans Digital BJT NPN 40V 500mA 200mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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DDTD123EC-7-F | Hersteller : Diodes Zetex |
Trans Digital BJT NPN 40V 500mA 200mW 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |

