DF100R07W1H5FPB53BPSA1 Infineon Technologies
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 62.18 EUR |
| 100+ | 56.96 EUR |
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Technische Details DF100R07W1H5FPB53BPSA1 Infineon Technologies
Description: IGBT MODULE 650V 40A AG-EASY1B, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A, NTC Thermistor: Yes, Supplier Device Package: AG-EASY1B, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 40 µA, Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V.
Weitere Produktangebote DF100R07W1H5FPB53BPSA1 nach Preis ab 65.43 EUR bis 65.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DF100R07W1H5FPB53BPSA1 | Hersteller : Infineon Technologies |
 Description: IGBT MODULE 650V 40A AG-EASY1BPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A NTC Thermistor: Yes Supplier Device Package: AG-EASY1B Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 20 mW Current - Collector Cutoff (Max): 40 µA Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V |
auf Bestellung 233 Stücke: Lieferzeit 10-14 Tag (e) |
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| DF100R07W1H5FPB53BPSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - DF100R07W1H5FPB53BPSA1 - DF100R07 INSULATED GATE BIPOLAR TRANSIS tariffCode: 85412900 euEccn: TBC hazardous: false productTraceability: No usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 233 Stücke: Lieferzeit 14-21 Tag (e) |