DF150R12RT4HOSA1 Infineon Technologies
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 156.45 EUR |
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Technische Details DF150R12RT4HOSA1 Infineon Technologies
Description: IGBT MOD 1200V 150A 790W MOD, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single Chopper, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A, NTC Thermistor: No, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 790 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V.
Weitere Produktangebote DF150R12RT4HOSA1 nach Preis ab 118.74 EUR bis 163.5 EUR
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DF150R12RT4HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 150A 790W 7-Pin 34MM-1 Tray |
auf Bestellung 622 Stücke: Lieferzeit 14-21 Tag (e) |
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DF150R12RT4HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 150A 790W 7-Pin 34MM-1 Tray |
auf Bestellung 2770 Stücke: Lieferzeit 14-21 Tag (e) |
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DF150R12RT4HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 150A 790W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 790 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V |
auf Bestellung 3416 Stücke: Lieferzeit 10-14 Tag (e) |
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| DF150R12RT4HOSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - DF150R12RT4HOSA1 - DFXR12I - IGBT MODULEeuEccn: TBC hazardous: false productTraceability: Yes-Date/Lot Code usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 719 Stücke: Lieferzeit 14-21 Tag (e) |
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DF150R12RT4HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 150A 790000mW Automotive 7-Pin 34MM-1 Tray |
Produkt ist nicht verfügbar |
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DF150R12RT4HOSA1 | Hersteller : Infineon Technologies |
Trans IGBT Module N-CH 1200V 150A 790W 7-Pin 34MM-1 Tray |
Produkt ist nicht verfügbar |
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|
DF150R12RT4HOSA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 150A 790W MODPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 790 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V |
Produkt ist nicht verfügbar |

