DF17MR12W1M1HFB68BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Discrete Semiconductor Modules CoolSiC MOSFET booster module 1200 V
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Technische Details DF17MR12W1M1HFB68BPSA1 Infineon Technologies
Description: LOW POWER EASY, Packaging: Tray, Technology: SiCFET (Silicon Carbide), Part Status: Active, Package / Case: Module, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 175°C (TJ), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tj), Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V, Vgs(th) (Max) @ Id: 5.15V @ 20mA, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 800 V.
Weitere Produktangebote DF17MR12W1M1HFB68BPSA1 nach Preis ab 70.58 EUR bis 98.93 EUR
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DF17MR12W1M1HFB68BPSA1 | Infineon Technologies |
Description: LOW POWER EASY Packaging: Tray Technology: SiCFET (Silicon Carbide) Part Status: Active Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 175°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tj) Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V Vgs(th) (Max) @ Id: 5.15V @ 20mA Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 800 V |
auf Bestellung 33 Stücke: Lieferzeit 10-14 Tag (e) |
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| DF17MR12W1M1HFB68BPSA1 |
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Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Technology: SiCFET (Silicon Carbide)
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 800 V
Description: LOW POWER EASY
Packaging: Tray
Technology: SiCFET (Silicon Carbide)
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 800 V
auf Bestellung 33 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 98.93 EUR |
| 24+ | 70.58 EUR |