DF200R12W1H3FB11BOMA1 Infineon Technologies
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Technische Details DF200R12W1H3FB11BOMA1 Infineon Technologies
Description: IGBT MOD 1200V 30A 20MW, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C, Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A, NTC Thermistor: Yes, Supplier Device Package: Module, IGBT Type: Trench Field Stop, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V.
Weitere Produktangebote DF200R12W1H3FB11BOMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DF200R12W1H3FB11BOMA1 | Hersteller : Infineon Technologies |
 Easy PACK Module with fast Trench/Field stop High-Speed 3 IGBT and SiC Diode and PressFIT/NTC |
Produkt ist nicht verfügbar |
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| DF200R12W1H3FB11BOMA1 | Hersteller : Infineon Technologies |
Description: IGBT MOD 1200V 30A 20MW Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.15 nF @ 25 V |
Produkt ist nicht verfügbar |