Technische Details DF23MR12W1M1B11BOMA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2, Supplier Device Package: AG-EASY1BM-2, Vgs(th) (Max) @ Id: 5.5V @ 10mA, Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V, Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 25A, Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote DF23MR12W1M1B11BOMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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DF23MR12W1M1B11BOMA1 | Infineon Technologies |
 Description: MOSFET 2N-CH 1200V AG-EASY1BM-2Supplier Device Package: AG-EASY1BM-2 Vgs(th) (Max) @ Id: 5.5V @ 10mA Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V Current - Continuous Drain (Id) @ 25°C: 25A Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DF23MR12W1M1B11BOMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Supplier Device Package: AG-EASY1BM-2
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2N-CH 1200V AG-EASY1BM-2
Supplier Device Package: AG-EASY1BM-2
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 15V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 25A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen
Stück im Wert von UAH