
DF2S6P1CT,L3F Toshiba Semiconductor and Storage

Description: UNIDIRECTIONAL ESD DIODE VRWM=5.
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 160W
Power Line Protection: No
auf Bestellung 9810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
27+ | 0.67 EUR |
43+ | 0.41 EUR |
100+ | 0.26 EUR |
500+ | 0.19 EUR |
1000+ | 0.17 EUR |
2000+ | 0.15 EUR |
5000+ | 0.13 EUR |
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Technische Details DF2S6P1CT,L3F Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM=5., Packaging: Tape & Reel (TR), Package / Case: SOD-882, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: 150°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 90pF @ 1MHz, Current - Peak Pulse (10/1000µs): 10A (8/20µs), Supplier Device Package: CST2, Unidirectional Channels: 1, Voltage - Breakdown (Min): 5.6V, Voltage - Clamping (Max) @ Ipp: 16V, Power - Peak Pulse: 160W, Power Line Protection: No.
Weitere Produktangebote DF2S6P1CT,L3F
Foto | Bezeichnung | Hersteller | Beschreibung |
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DF2S6P1CT,L3F | Hersteller : Toshiba Semiconductor and Storage |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 160W Power Line Protection: No |
Produkt ist nicht verfügbar |
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DF2S6P1CT,L3F | Hersteller : Toshiba |
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Produkt ist nicht verfügbar |