DF2S6P1CT,L3F Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: UNIDIRECTIONAL ESD DIODE VRWM=5.
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 90pF @ 1MHz
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 16V
Power - Peak Pulse: 160W
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.13 EUR |
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Technische Details DF2S6P1CT,L3F Toshiba Semiconductor and Storage
Description: UNIDIRECTIONAL ESD DIODE VRWM=5., Packaging: Tape & Reel (TR), Package / Case: SOD-882, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: 150°C (TJ), Applications: General Purpose, Capacitance @ Frequency: 90pF @ 1MHz, Current - Peak Pulse (10/1000µs): 10A (8/20µs), Supplier Device Package: CST2, Unidirectional Channels: 1, Voltage - Breakdown (Min): 5.6V, Voltage - Clamping (Max) @ Ipp: 16V, Power - Peak Pulse: 160W, Power Line Protection: No.
Weitere Produktangebote DF2S6P1CT,L3F nach Preis ab 0.18 EUR bis 0.67 EUR
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DF2S6P1CT,L3F | Hersteller : Toshiba Semiconductor and Storage |
Description: UNIDIRECTIONAL ESD DIODE VRWM=5. Packaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 90pF @ 1MHz Current - Peak Pulse (10/1000µs): 10A (8/20µs) Supplier Device Package: CST2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 16V Power - Peak Pulse: 160W Power Line Protection: No |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DF2S6P1CT,L3F | Hersteller : Toshiba |
Toshiba |
Produkt ist nicht verfügbar |