DF419MR20W3M1HFB11BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 2000V 50A AG-EASY3B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 34mA
Supplier Device Package: AG-EASY3B
Part Status: Active
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Technische Details DF419MR20W3M1HFB11BPSA1 Infineon Technologies
Description: MOSFET 4N-CH 2000V 50A AG-EASY3B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 2000V (2kV), Current - Continuous Drain (Id) @ 25°C: 50A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV, Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V, Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 34mA, Supplier Device Package: AG-EASY3B, Part Status: Active.
Weitere Produktangebote DF419MR20W3M1HFB11BPSA1 nach Preis ab 345.84 EUR bis 364.71 EUR
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DF419MR20W3M1HFB11BPSA1 | Infineon Technologies |
Discrete Semiconductor Modules 2000 V, 60 A Boost EasyPACK 3B CoolSiC MOSFET Module |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| DF419MR20W3M1HFB11BPSA1 |
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Hersteller: Infineon Technologies
Discrete Semiconductor Modules 2000 V, 60 A Boost EasyPACK 3B CoolSiC MOSFET Module
Discrete Semiconductor Modules 2000 V, 60 A Boost EasyPACK 3B CoolSiC MOSFET Module
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 364.71 EUR |
| 8+ | 345.84 EUR |