DF419MR20W3M1HFB11BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET 4N-CH 2000V 50A AG-EASY3B
Packaging: Tray
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 34mA
Supplier Device Package: AG-EASY3B
Description: MOSFET 4N-CH 2000V 50A AG-EASY3B
Packaging: Tray
Part Status: Active
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 2000V (2kV)
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V
Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 34mA
Supplier Device Package: AG-EASY3B
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 772.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DF419MR20W3M1HFB11BPSA1 Infineon Technologies
Description: MOSFET 4N-CH 2000V 50A AG-EASY3B, Packaging: Tray, Part Status: Active, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 2000V (2kV), Current - Continuous Drain (Id) @ 25°C: 50A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 7240pF @ 1.2kV, Rds On (Max) @ Id, Vgs: 26.5mOhm @ 60A, 18V, Gate Charge (Qg) (Max) @ Vgs: 234nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 34mA, Supplier Device Package: AG-EASY3B.
Weitere Produktangebote DF419MR20W3M1HFB11BPSA1 nach Preis ab 705.25 EUR bis 778 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DF419MR20W3M1HFB11BPSA1 | Hersteller : Infineon Technologies | Discrete Semiconductor Modules EASY STANDARD PLUS |
auf Bestellung 14 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||
DF419MR20W3M1HFB11BPSA1 | Hersteller : INFINEON |
Description: INFINEON - DF419MR20W3M1HFB11BPSA1 - MOSFET-Transistor, n-Kanal, 60 A, 2 kV, 0.0172 ohm, 18 V, 5.15 V tariffCode: 85412900 productTraceability: Yes-Date/Lot Code Verlustleistung: 20mW Gate-Source-Schwellenspannung, max.: 5.15V Kanaltyp: n-Kanal euEccn: NLR Rds(on)-Prüfspannung: 18V hazardous: true Drain-Source-Spannung Vds: 2kV Drain-Source-Durchgangswiderstand: 0.0172ohm Dauer-Drainstrom Id: 60A Betriebstemperatur, max.: 175°C usEccn: EAR99 Produktpalette: EasyPACK CoolsiC Series SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||
DF419MR20W3M1HFB11BPSA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH SiC 2KV 50A 40-Pin Tray |
Produkt ist nicht verfügbar |