DF80R07W1H5FPB11BPSA1 Infineon Technologies
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 90.82 EUR |
| 10+ | 83.46 EUR |
| 30+ | 82.16 EUR |
| 60+ | 77 EUR |
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Technische Details DF80R07W1H5FPB11BPSA1 Infineon Technologies
Description: LOW POWER EASY, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.72V @ 15V, 20A, NTC Thermistor: Yes, Supplier Device Package: AG-EASY1B-2, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 20 mW, Current - Collector Cutoff (Max): 12 µA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.
Weitere Produktangebote DF80R07W1H5FPB11BPSA1 nach Preis ab 90.45 EUR bis 99.49 EUR
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DF80R07W1H5FPB11BPSA1 | Hersteller : Infineon Technologies |
 Description: LOW POWER EASYPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.72V @ 15V, 20A NTC Thermistor: Yes Supplier Device Package: AG-EASY1B-2 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 20 mW Current - Collector Cutoff (Max): 12 µA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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