DF8MR12W1M1HFB67BPSA1 Infineon Technologies

Description: SIC 2N-CH 1200V 45A AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 45A, FET Feature: Silicon Carbide (SiC), Supplier Device Package: AG-EASY1B, Part Status: Active, Technology: Silicon Carbide (SiC), Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V, Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V, Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 20mA.