DF8MR12W1M1HFB67BPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDiscrete Semiconductor Modules CoolSiC MOSFET booster module 1200 V
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 143.63 EUR |
| 10+ | 128.74 EUR |
| 120+ | 122.2 EUR |
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Technische Details DF8MR12W1M1HFB67BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V 45A AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 45A, Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V, Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V, Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 20mA, Supplier Device Package: AG-EASY1B, Part Status: Active.
Weitere Produktangebote DF8MR12W1M1HFB67BPSA1 nach Preis ab 160.37 EUR bis 160.37 EUR
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DF8MR12W1M1HFB67BPSA1 | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 1200V 45A AG-EASY1B Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 45A Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V Vgs(th) (Max) @ Id: 5.15V @ 20mA Supplier Device Package: AG-EASY1B Part Status: Active |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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