DF8MR12W1M1HFB67BPSA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET 2N-CH 1200V 45A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 45A
Supplier Device Package: AG-EASY1B
Part Status: Active
Technology: Silicon Carbide (SiC)
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 20mA
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 168.26 EUR |
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Technische Details DF8MR12W1M1HFB67BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V 45A AG-EASY1B, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -40°C ~ 175°C (TJ), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 45A, Supplier Device Package: AG-EASY1B, Part Status: Active, Technology: Silicon Carbide (SiC), Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V, Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V, Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V, Vgs(th) (Max) @ Id: 5.15V @ 20mA.
Weitere Produktangebote DF8MR12W1M1HFB67BPSA1 nach Preis ab 150.52 EUR bis 171.95 EUR
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DF8MR12W1M1HFB67BPSA1 | Hersteller : Infineon Technologies |
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auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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