DF8MR12W1M1HFB67BPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Discrete Semiconductor Modules CoolSiC MOSFET booster module 1200 V
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Technische Details DF8MR12W1M1HFB67BPSA1 Infineon Technologies
Description: MOSFET 2N-CH 1200V 45A AG-EASY1B, Vgs(th) (Max) @ Id: 5.15V @ 20mA, Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V, Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V, Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V, Technology: Silicon Carbide (SiC), Part Status: Active, Supplier Device Package: AG-EASY1B, Current - Continuous Drain (Id) @ 25°C: 45A, Drain to Source Voltage (Vdss): 1200V (1.2kV), Operating Temperature: -40°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Tray.
Weitere Produktangebote DF8MR12W1M1HFB67BPSA1 nach Preis ab 160.37 EUR bis 160.37 EUR
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DF8MR12W1M1HFB67BPSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 1200V 45A AG-EASY1B Vgs(th) (Max) @ Id: 5.15V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V Technology: Silicon Carbide (SiC) Part Status: Active Supplier Device Package: AG-EASY1B Current - Continuous Drain (Id) @ 25°C: 45A Drain to Source Voltage (Vdss): 1200V (1.2kV) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
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| DF8MR12W1M1HFB67BPSA1 |
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Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 45A AG-EASY1B
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Technology: Silicon Carbide (SiC)
Part Status: Active
Supplier Device Package: AG-EASY1B
Current - Continuous Drain (Id) @ 25°C: 45A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2N-CH 1200V 45A AG-EASY1B
Vgs(th) (Max) @ Id: 5.15V @ 20mA
Gate Charge (Qg) (Max) @ Vgs: 149nC @ 18V
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 50A, 18V
Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 800V
Technology: Silicon Carbide (SiC)
Part Status: Active
Supplier Device Package: AG-EASY1B
Current - Continuous Drain (Id) @ 25°C: 45A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 160.37 EUR |