DG15X12T2 STARPOWER SEMICONDUCTOR
Hersteller: STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 15A; 138W; TO247
Type of transistor: IGBT
Collector current: 15A
Case: TO247
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Turn-on time: 103ns
Turn-off time: 484ns
Collector-emitter voltage: 1200V
Power dissipation: 138W
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 0.12µC
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.82 EUR |
21+ | 3.43 EUR |
22+ | 3.25 EUR |
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Technische Details DG15X12T2 STARPOWER SEMICONDUCTOR
Category: THT IGBT transistors, Description: Transistor: IGBT; 1200V; 15A; 138W; TO247, Type of transistor: IGBT, Collector current: 15A, Case: TO247, Mounting: THT, Gate-emitter voltage: ±20V, Pulsed collector current: 45A, Turn-on time: 103ns, Turn-off time: 484ns, Collector-emitter voltage: 1200V, Power dissipation: 138W, Features of semiconductor devices: integrated anti-parallel diode, Kind of package: tube, Gate charge: 0.12µC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DG15X12T2 nach Preis ab 3.25 EUR bis 3.82 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DG15X12T2 | Hersteller : STARPOWER SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 15A; 138W; TO247 Type of transistor: IGBT Collector current: 15A Case: TO247 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 45A Turn-on time: 103ns Turn-off time: 484ns Collector-emitter voltage: 1200V Power dissipation: 138W Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 0.12µC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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DG15X12T2 | Hersteller : STARPOWER |
Description: STARPOWER - DG15X12T2 - IGBT, 30 A, 1.75 V, 138 W, 1.2 kV, TO-247, 3 Pin(s) MSL: - Kollektor-Emitter-Sättigungsspannung Vce(on): 1.75 Verlustleistung Pd: 138 Bauform - Transistor: TO-247 Kollektor-Emitter-Spannung V(br)ceo: 1.2 Anzahl der Pins: 3 Produktpalette: DOSEMI Trench DC-Kollektorstrom: 30 Betriebstemperatur, max.: 175 SVHC: No SVHC (08-Jul-2021) |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |