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DGD2005S8-13

DGD2005S8-13 Diodes Incorporated


DGD2005.pdf Hersteller: Diodes Incorporated
Description: IC GATE DRV HALF-BRIDGE 8SO 2.5K
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.6V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.60 EUR
5000+0.55 EUR
7500+0.53 EUR
12500+0.52 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DGD2005S8-13 Diodes Incorporated

Description: IC GATE DRV HALF-BRIDGE 8SO 2.5K, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 200 V, Supplier Device Package: 8-SO, Rise / Fall Time (Typ): 100ns, 35ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.6V, 2.5V, Current - Peak Output (Source, Sink): 290mA, 600mA, Part Status: Active, DigiKey Programmable: Not Verified.

Weitere Produktangebote DGD2005S8-13 nach Preis ab 0.62 EUR bis 2.39 EUR

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DGD2005S8-13 DGD2005S8-13 Hersteller : Diodes Incorporated DIOD_S_A0012366283_1-2543649.pdf Gate Drivers HV Gate Driver
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.02 EUR
10+1.28 EUR
100+0.90 EUR
500+0.82 EUR
1000+0.76 EUR
2500+0.68 EUR
5000+0.62 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DGD2005S8-13 DGD2005S8-13 Hersteller : Diodes Incorporated DGD2005.pdf Description: IC GATE DRV HALF-BRIDGE 8SO 2.5K
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.6V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 13089 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.39 EUR
12+1.47 EUR
25+1.23 EUR
100+0.96 EUR
250+0.82 EUR
500+0.74 EUR
1000+0.67 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DGD2005S8-13 DGD2005S8-13 Hersteller : Diodes Inc dgd2005.pdf Driver 2-OUT High and Low Side Half Brdg Automotive 8-Pin SO T/R
auf Bestellung 12500 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DGD2005S8-13 Hersteller : DIODES INCORPORATED DGD2005.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: -600...290mA
Type of integrated circuit: driver
Impulse rise time: 220ns
Pulse fall time: 80ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Supply voltage: 10...20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DGD2005S8-13 Hersteller : DIODES INCORPORATED DGD2005.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Output current: -600...290mA
Type of integrated circuit: driver
Impulse rise time: 220ns
Pulse fall time: 80ns
Number of channels: 1
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Supply voltage: 10...20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH