Produkte > IXYS > DHG10I600PA
DHG10I600PA

DHG10I600PA IXYS


DHG10I600PA.pdf Hersteller: IXYS
Description: DIODE GEN PURP 600V 10A TO220AC
auf Bestellung 30 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.7 EUR
10+ 4.22 EUR
Mindestbestellmenge: 4
Produktrezensionen
Produktbewertung abgeben

Technische Details DHG10I600PA IXYS

Category: THT universal diodes, Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; TO220AC; 70W; 35ns, Mounting: THT, Power dissipation: 70W, Kind of package: tube, Type of diode: rectifying, Features of semiconductor devices: fast switching, Technology: Sonic FRD™, Heatsink thickness: 1.14...1.39mm, Case: TO220AC, Max. off-state voltage: 0.6kV, Max. forward voltage: 2.18V, Load current: 10A, Semiconductor structure: single diode, Reverse recovery time: 35ns, Max. forward impulse current: 80A, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote DHG10I600PA

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DHG10I600PA DHG10I600PA Hersteller : IXYS DHG10I600PA-1546692.pdf Diodes - General Purpose, Power, Switching 10 Amps 600V
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
DHG10I600PA DHG10I600PA Hersteller : IXYS DHG10I600PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; TO220AC; 70W; 35ns
Mounting: THT
Power dissipation: 70W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.18V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DHG10I600PA DHG10I600PA Hersteller : IXYS DHG10I600PA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10A; tube; Ifsm: 80A; TO220AC; 70W; 35ns
Mounting: THT
Power dissipation: 70W
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Heatsink thickness: 1.14...1.39mm
Case: TO220AC
Max. off-state voltage: 0.6kV
Max. forward voltage: 2.18V
Load current: 10A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 80A
Produkt ist nicht verfügbar