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DI005N06SQ2

DI005N06SQ2 Diotec Semiconductor

di005n06sq2.pdf
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, SO-8, 60V, 5A, 150C, N
auf Bestellung 2087 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+1.93 EUR
10+1.23 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.56 EUR
4000+0.45 EUR
8000+0.42 EUR
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Technische Details DI005N06SQ2 Diotec Semiconductor

Description: IC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.

Weitere Produktangebote DI005N06SQ2

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DI005N06SQ2 Diotec Semiconductor di005n06sq2.pdf Description: IC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DI005N06SQ2 DIOTEC SEMICONDUCTOR di005n06sq2.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DI005N06SQ2 di005n06sq2.pdf
Hersteller: Diotec Semiconductor
Description: IC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1295pF @ 25V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DI005N06SQ2 di005n06sq2.pdf
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.1A; Idm: 30A; 1.3W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 30A
Power dissipation: 1.3W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH