DI006H03SQ Diotec Semiconductor
auf Bestellung 3975 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 6.4 EUR |
| 11+ | 5.02 EUR |
| 100+ | 2.99 EUR |
| 500+ | 2.96 EUR |
| 1000+ | 2.89 EUR |
| 2000+ | 2.54 EUR |
| 4000+ | 2.4 EUR |
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Technische Details DI006H03SQ Diotec Semiconductor
Description: MOSFET SO8 N+P 30V 0.025OHM 150C, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DI006H03SQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DI006H03SQ | Hersteller : DIOTEC SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 4.8/-3.3A; 1.5W; SO8 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.8/-3.3A Pulsed drain current: 60...-30A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40/80mΩ Mounting: SMD Gate charge: 11.7/11.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: MOSFET H-Bridge Anzahl je Verpackung: 1 Stücke |
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DI006H03SQ | Hersteller : Diotec Semiconductor |
Description: MOSFET SO8 N+P 30V 0.025OHM 150C Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
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DI006H03SQ | Hersteller : Diotec Semiconductor |
Description: MOSFET SO8 N+P 30V 0.025OHM 150C Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| DI006H03SQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET x2; unipolar; 30/-30V; 4.8/-3.3A; 1.5W; SO8 Type of transistor: N/P-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.8/-3.3A Pulsed drain current: 60...-30A Power dissipation: 1.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 40/80mΩ Mounting: SMD Gate charge: 11.7/11.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: MOSFET H-Bridge |
Produkt ist nicht verfügbar |