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DI006H03SQ

DI006H03SQ Diotec Semiconductor

di006h03sq.pdf Hersteller: Diotec Semiconductor
Description: MOSFET 2N/2P-CH 30V 6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
10+2.03 EUR
100+1.44 EUR
500+1.18 EUR
1000+1.09 EUR
2000+1.02 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DI006H03SQ Diotec Semiconductor

Description: MOSFET 2N/2P-CH 30V 6A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N and 2 P-Channel (Full Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DI006H03SQ nach Preis ab 1.62 EUR bis 4.33 EUR

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DI006H03SQ DI006H03SQ Hersteller : Diotec Semiconductor di006h03sq.pdf MOSFET MOSFET, SO-8, 30V, 6A, 150C, N+P
auf Bestellung 3975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.33 EUR
10+3.40 EUR
100+2.02 EUR
500+2.01 EUR
1000+1.95 EUR
2000+1.72 EUR
4000+1.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DI006H03SQ Hersteller : DIOTEC SEMICONDUCTOR di006h03sq.pdf DI006H03SQ-DIO Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DI006H03SQ DI006H03SQ Hersteller : Diotec Semiconductor di006h03sq.pdf Description: MOSFET 2N/2P-CH 30V 6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 631pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V, 11.4nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH