DI006N06PW DIOTEC SEMICONDUCTOR


Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 6A; Idm: 80A; 1.67W; QFN2X2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 6A
Pulsed drain current: 80A
Power dissipation: 1.67W
Case: QFN2X2
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details DI006N06PW DIOTEC SEMICONDUCTOR

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 6A; Idm: 80A; 1.67W; QFN2X2, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 6A, Pulsed drain current: 80A, Power dissipation: 1.67W, Case: QFN2X2, Gate-source voltage: ±20V, On-state resistance: 30mΩ, Mounting: SMD, Gate charge: 10nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.

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DI006N06PW Hersteller : DIOTEC SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 6A; Idm: 80A; 1.67W; QFN2X2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 6A
Pulsed drain current: 80A
Power dissipation: 1.67W
Case: QFN2X2
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH