DI010N03PW Diotec Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.87 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |
| 2000+ | 0.31 EUR |
| 4000+ | 0.26 EUR |
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Technische Details DI010N03PW Diotec Semiconductor
Description: MOSFET POWERQFN 2X2 N 30V 10A 0., Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Power Dissipation (Max): 1.4W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-QFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V.
Weitere Produktangebote DI010N03PW nach Preis ab 0.31 EUR bis 1.27 EUR
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DI010N03PW | Diotec Semiconductor |
 Description: MOSFET POWERQFN 2X2 N 30V 10A 0.Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-QFN (2x2) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 1.4W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 30 V |
auf Bestellung 3850 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI010N03PW |
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Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 2X2 N 30V 10A 0.
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-QFN (2x2)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.4W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET POWERQFN 2X2 N 30V 10A 0.
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-QFN (2x2)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.4W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 3850 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.27 EUR |
| 27+ | 0.79 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |
| 2000+ | 0.31 EUR |