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DI010N03PW

DI010N03PW Diotec Semiconductor

di010n03pw.pdf Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 2X2 N 30V 10A 0.
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-QFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.21 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DI010N03PW Diotec Semiconductor

Description: MOSFET POWERQFN 2X2 N 30V 10A 0., Packaging: Tape & Reel (TR), Package / Case: 8-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V, Power Dissipation (Max): 1.4W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-QFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V.

Weitere Produktangebote DI010N03PW nach Preis ab 0.21 EUR bis 0.77 EUR

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DI010N03PW DI010N03PW Hersteller : Diotec Semiconductor di010n03pw.pdf Description: MOSFET POWERQFN 2X2 N 30V 10A 0.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-QFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 15 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
35+0.51 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.25 EUR
2000+0.22 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
DI010N03PW DI010N03PW Hersteller : Diotec Semiconductor di010n03pw.pdf MOSFETs MOSFET, PowerQFN 2x2, 30V, 10A, 150C, N
auf Bestellung 6800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.77 EUR
10+0.52 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.25 EUR
2000+0.23 EUR
4000+0.21 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DI010N03PW Hersteller : Diotec Semiconductor di010n03pw.pdf Trans MOSFET N-CH 30V 10A
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DI010N03PW Hersteller : DIOTEC SEMICONDUCTOR di010n03pw.pdf DI010N03PW-DIO SMD N channel transistors
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