DI020N06D1-AQ DIOTEC
Hersteller: DIOTEC
Description: DIOTEC - DI020N06D1-AQ - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.034 ohm, TO-252AA (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 20A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 25W
Bauform - Transistor: TO-252AA (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.034ohm
SVHC: No SVHC (27-Jun-2024)
| Anzahl | Privatkunde |
|---|---|
| 301+ | 0.83 EUR |
| 303+ | 0.77 EUR |
| 337+ | 0.63 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.44 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DI020N06D1-AQ DIOTEC
Description: MOSFET DPAK N 60V 0.034OHM 150C, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-252AA (DPAK), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote DI020N06D1-AQ nach Preis ab 0.35 EUR bis 1.44 EUR
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DI020N06D1-AQ | DIOTEC |
Description: DIOTEC - DI020N06D1-AQ - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.034 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DI020N06D1-AQ | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 50A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Pulsed drain current: 50A Power dissipation: 25W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 2494 Stücke: Lieferzeit 14-21 Tag (e) |
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DI020N06D1-AQ | Diotec Semiconductor |
Description: MOSFET DPAK N 60V 0.034OHM 150C Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 484 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: DIOTEC
Description: DIOTEC - DI020N06D1-AQ - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.034 ohm, TO-252AA (DPAK), Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: DIOTEC - DI020N06D1-AQ - Leistungs-MOSFET, n-Kanal, 60 V, 20 A, 0.034 ohm, TO-252AA (DPAK), Oberflächenmontage
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 301+ | 0.83 EUR |
| 303+ | 0.77 EUR |
| 337+ | 0.63 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.44 EUR |
| DI020N06D1-AQ |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 50A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 50A
Power dissipation: 25W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; Idm: 50A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Pulsed drain current: 50A
Power dissipation: 25W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2494 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 111+ | 0.77 EUR |
| 167+ | 0.51 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |
| DI020N06D1-AQ |
|
Hersteller: Diotec Semiconductor
Description: MOSFET DPAK N 60V 0.034OHM 150C
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET DPAK N 60V 0.034OHM 150C
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 23+ | 0.94 EUR |
| 100+ | 0.62 EUR |