DI025N06PT-AQ Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 65V 25A 8-POWERVDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 28+ | 0.65 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |
| 2000+ | 0.25 EUR |
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Technische Details DI025N06PT-AQ Diotec Semiconductor
Description: MOSFET N-CH 65V 25A 8-POWERVDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote DI025N06PT-AQ
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DI025N06PT-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET N-CH 65V 25A 8-POWERVDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Input Capacitance (Ciss) (Max) @ Vds: 406 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DI025N06PT-AQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 3x3, 65V, 25A, 150C, N, AEC-Q101 |
Produkt ist nicht verfügbar |
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DI025N06PT-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 15A; Idm: 80A; 25W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 15A Pulsed drain current: 80A Power dissipation: 25W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 30mΩ Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |