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DI025N20PQ

DI025N20PQ Diotec Semiconductor

di025n20pq.pdf Hersteller: Diotec Semiconductor
Description: MOSFET N , 200V 25A 48mW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.21 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DI025N20PQ Diotec Semiconductor

Description: MOSFET N , 200V 25A 48mW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-QFN (5x6), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V, Qualification: AEC-Q101.

Weitere Produktangebote DI025N20PQ nach Preis ab 1.21 EUR bis 2.9 EUR

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DI025N20PQ DI025N20PQ Hersteller : Diotec Semiconductor di025n20pq.pdf Description: MOSFET N , 200V 25A 48mW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 20A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-QFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
10+2.32 EUR
100+1.85 EUR
500+1.56 EUR
1000+1.32 EUR
2000+1.26 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
DI025N20PQ DI025N20PQ Hersteller : Diotec Semiconductor di025n20pq.pdf MOSFETs MOSFET, PowerQFN 5x6, 0, 200V, 25A, 0.048?
auf Bestellung 4970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.9 EUR
10+2.41 EUR
100+1.92 EUR
500+1.62 EUR
1000+1.3 EUR
5000+1.25 EUR
10000+1.21 EUR
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DI025N20PQ Hersteller : Diotec Semiconductor di025n20pq.pdf N-Channel Power MOSFETN-Kanal Leistungs-MOSFET
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DI025N20PQ Hersteller : DIOTEC SEMICONDUCTOR di025n20pq.pdf DI025N20PQ-DIO SMD N channel transistors
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