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DI028N10PQ2-AQ Diotec Semiconductor


di028n10pq2.pdf Hersteller: Diotec Semiconductor
MOSFETs (Field Effect Transistors)
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Technische Details DI028N10PQ2-AQ Diotec Semiconductor

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 18A, Pulsed drain current: 130A, Power dissipation: 32.7W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 26mΩ, Mounting: SMD, Gate charge: 22nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry, Anzahl je Verpackung: 1 Stücke.

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DI028N10PQ2-AQ Hersteller : DIOTEC SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Pulsed drain current: 130A
Power dissipation: 32.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI028N10PQ2-AQ Hersteller : DIOTEC SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; Idm: 130A; 32.7W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Pulsed drain current: 130A
Power dissipation: 32.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar