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Technische Details DI028N10PQ2 Diotec Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 100V; 18A; Idm: 130A; 32.7W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 18A, Pulsed drain current: 130A, Power dissipation: 32.7W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 21mΩ, Mounting: SMD, Gate charge: 22nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote DI028N10PQ2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
DI028N10PQ2 | Diotec Semiconductor |
 MOSFETs PowerQFN 5x6-Dual, N+N, 100V, 28A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DI028N10PQ2 | DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 18A; Idm: 130A; 32.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Pulsed drain current: 130A Power dissipation: 32.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DI028N10PQ2 |
|
Hersteller: Diotec Semiconductor
MOSFETs PowerQFN 5x6-Dual, N+N, 100V, 28A
MOSFETs PowerQFN 5x6-Dual, N+N, 100V, 28A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DI028N10PQ2 |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 18A; Idm: 130A; 32.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Pulsed drain current: 130A
Power dissipation: 32.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 18A; Idm: 130A; 32.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Pulsed drain current: 130A
Power dissipation: 32.7W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH