DI030N03D1 Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET DPAK N 30V 0.01OHM 175C
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V
auf Bestellung 1502 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 23+ | 0.77 EUR |
| 100+ | 0.50 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.34 EUR |
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Technische Details DI030N03D1 Diotec Semiconductor
Description: DIOTEC - DI030N03D1 - Leistungs-MOSFET, n-Kanal, 30 V, 30 A, 0.014 ohm, TO-252AA (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 30A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.2V, euEccn: NLR, Verlustleistung: 40W, Bauform - Transistor: TO-252AA (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.014ohm, SVHC: No SVHC (27-Jun-2024).
Weitere Produktangebote DI030N03D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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DI030N03D1 | Hersteller : DIOTEC |
Description: DIOTEC - DI030N03D1 - Leistungs-MOSFET, n-Kanal, 30 V, 30 A, 0.014 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 40W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.014ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI030N03D1 | Hersteller : Diotec Semiconductor |
DI030N03D1 |
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DI030N03D1 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 80A; 40W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Pulsed drain current: 80A Power dissipation: 40W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 17.5nC Kind of channel: enhancement Kind of package: reel; tape Anzahl je Verpackung: 2500 Stücke |
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DI030N03D1 | Hersteller : Diotec Semiconductor |
Description: MOSFET DPAK N 30V 0.01OHM 175C Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 940 pF @ 15 V |
Produkt ist nicht verfügbar |
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DI030N03D1 | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, DPAK, 30V, 30A, 175C, N |
Produkt ist nicht verfügbar |
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DI030N03D1 | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; Idm: 80A; 40W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Pulsed drain current: 80A Power dissipation: 40W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Gate charge: 17.5nC Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |