DI035N06PQ2

DI035N06PQ2 Diotec Semiconductor


di035n06pq2.pdf Hersteller: Diotec Semiconductor
Description: MOSFET 2N-CH 60V 35A 8TDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 35.7W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
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Technische Details DI035N06PQ2 Diotec Semiconductor

Description: MOSFET 2N-CH 60V 35A 8TDSON, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 35.7W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 782pF @ 30V, Rds On (Max) @ Id, Vgs: 15mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14.6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TDSON-8-4.

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DI035N06PQ2 Hersteller : Diotec Semiconductor di035n06pq2.pdf Array
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