Technische Details DI035N06PQ2 Diotec Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 110A; 35.7W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 35A, Pulsed drain current: 110A, Power dissipation: 35.7W, Case: Dual PQFN5X6, On-state resistance: 15mΩ, Mounting: SMD, Gate charge: 14.6nC, Kind of channel: enhancement.
Weitere Produktangebote DI035N06PQ2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
DI035N06PQ2 | Diotec Semiconductor |
 MOSFETs PowerQFN 5x6-Dual, N+N, 60V, 35A, 15m?, 175C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DI035N06PQ2 | DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 110A; 35.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 35A Pulsed drain current: 110A Power dissipation: 35.7W Case: Dual PQFN5X6 On-state resistance: 15mΩ Mounting: SMD Gate charge: 14.6nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DI035N06PQ2 |
|
Hersteller: Diotec Semiconductor
MOSFETs PowerQFN 5x6-Dual, N+N, 60V, 35A, 15m?, 175C
MOSFETs PowerQFN 5x6-Dual, N+N, 60V, 35A, 15m?, 175C
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DI035N06PQ2 |
|
Hersteller: DIOTEC SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 110A; 35.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 110A
Power dissipation: 35.7W
Case: Dual PQFN5X6
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 35A; Idm: 110A; 35.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 110A
Power dissipation: 35.7W
Case: Dual PQFN5X6
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 14.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH