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DI035N10PT-AQ

DI035N10PT-AQ DIOTEC

4408121.pdf
Hersteller: DIOTEC
Description: DIOTEC - DI035N10PT-AQ - Leistungs-MOSFET, n-Kanal, 100 V, 35 A, 0.018 ohm, QFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 35A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 25W
Bauform - Transistor: QFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.018ohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 4924 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
256+0.98 EUR
279+0.83 EUR
325+0.65 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 256 Stücke
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Produktrezensionen
Produktbewertung abgeben

Technische Details DI035N10PT-AQ DIOTEC

Description: MOSFET POWERQFN 3X3 N 100V 35A 0, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V, Qualification: AEC-Q101.

Weitere Produktangebote DI035N10PT-AQ nach Preis ab 0.42 EUR bis 1.99 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
DI035N10PT-AQ DI035N10PT-AQ DIOTEC SEMICONDUCTOR di035n10pt.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 130A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1850 Stücke:
Lieferzeit 14-21 Tag (e)
72+1.19 EUR
94+0.9 EUR
144+0.6 EUR
500+0.45 EUR
1000+0.42 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DI035N10PT-AQ DI035N10PT-AQ Diotec Semiconductor di035n10pt.pdf MOSFETs MOSFET, PowerQFN 3x3, 100V, 35A, 150C, N, AEC-Q101
auf Bestellung 1687 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.96 EUR
10+1.36 EUR
100+0.86 EUR
500+0.69 EUR
1000+0.57 EUR
5000+0.51 EUR
10000+0.45 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DI035N10PT-AQ DI035N10PT-AQ Diotec Semiconductor di035n10pt.pdf Description: MOSFET POWERQFN 3X3 N 100V 35A 0
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3789 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.99 EUR
17+1.24 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.52 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DI035N10PT-AQ di035n10pt.pdf
DI035N10PT-AQ
Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 130A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1850 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
72+1.19 EUR
94+0.9 EUR
144+0.6 EUR
500+0.45 EUR
1000+0.42 EUR
Mindestbestellmenge: 72 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DI035N10PT-AQ di035n10pt.pdf
DI035N10PT-AQ
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, PowerQFN 3x3, 100V, 35A, 150C, N, AEC-Q101
auf Bestellung 1687 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+1.96 EUR
10+1.36 EUR
100+0.86 EUR
500+0.69 EUR
1000+0.57 EUR
5000+0.51 EUR
10000+0.45 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DI035N10PT-AQ di035n10pt.pdf
DI035N10PT-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 N 100V 35A 0
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3789 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.99 EUR
17+1.24 EUR
100+0.81 EUR
500+0.63 EUR
1000+0.57 EUR
2000+0.52 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH