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DI035N10PT-AQ

DI035N10PT-AQ Diotec Semiconductor

di035n10pt.pdf Hersteller: Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 N 100V 35A 0
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 4840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
18+1 EUR
100+0.67 EUR
500+0.55 EUR
1000+0.46 EUR
2000+0.45 EUR
Mindestbestellmenge: 14
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Technische Details DI035N10PT-AQ Diotec Semiconductor

Description: MOSFET POWERQFN 3X3 N 100V 35A 0, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V, Qualification: AEC-Q101.

Weitere Produktangebote DI035N10PT-AQ nach Preis ab 0.56 EUR bis 1.49 EUR

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DI035N10PT-AQ DI035N10PT-AQ Hersteller : Diotec Semiconductor di035n10pt.pdf MOSFETs MOSFET, PowerQFN 3x3, 100V, 35A, 150C, N, AEC-Q101
auf Bestellung 2120 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.49 EUR
10+1.17 EUR
100+0.7 EUR
500+0.69 EUR
1000+0.67 EUR
2500+0.59 EUR
5000+0.56 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DI035N10PT-AQ DI035N10PT-AQ Hersteller : DIOTEC 4408121.pdf Description: DIOTEC - DI035N10PT-AQ - Leistungs-MOSFET, n-Kanal, 100 V, 35 A, 0.018 ohm, QFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 35A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 25W
Bauform - Transistor: QFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.018ohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 4924 Stücke:
Lieferzeit 14-21 Tag (e)
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DI035N10PT-AQ Hersteller : Diotec Semiconductor di035n10pt.pdf MOSFET, PowerQFN 3x3, 100V, 35A, 0, 25W
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
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DI035N10PT-AQ DI035N10PT-AQ Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA68F07C33F8080CE&compId=di035n10pt.pdf?ci_sign=3abd704c3ae2ffcd7d3bf6b35f768d26ba6cb4c6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 130A
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
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DI035N10PT-AQ DI035N10PT-AQ Hersteller : Diotec Semiconductor di035n10pt.pdf Description: MOSFET POWERQFN 3X3 N 100V 35A 0
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DI035N10PT-AQ DI035N10PT-AQ Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA68F07C33F8080CE&compId=di035n10pt.pdf?ci_sign=3abd704c3ae2ffcd7d3bf6b35f768d26ba6cb4c6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 130A; 25W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Power dissipation: 25W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Pulsed drain current: 130A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH