DI035P04PT Diotec Semiconductor
| Anzahl | Preis |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 1 EUR |
| 100+ | 0.6 EUR |
| 1000+ | 0.58 EUR |
| 2500+ | 0.51 EUR |
| 5000+ | 0.48 EUR |
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Technische Details DI035P04PT Diotec Semiconductor
Description: MOSFET POWERQFN 3X3 P -40V -35A, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V.
Weitere Produktangebote DI035P04PT nach Preis ab 0.39 EUR bis 1.51 EUR
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DI035P04PT | Hersteller : Diotec Semiconductor |
 Description: MOSFET POWERQFN 3X3 P -40V -35APackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 20 V |
auf Bestellung 2321 Stücke: Lieferzeit 10-14 Tag (e) |
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