DI040N10D1-AQ Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET, DPAK, N, 100V, 40A, 17M,
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 37.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1192 pF @ 50 V
Qualification: AEC-Q101
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Technische Details DI040N10D1-AQ Diotec Semiconductor
Description: MOSFET, DPAK, N, 100V, 40A, 17M,, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V, Power Dissipation (Max): 37.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1192 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote DI040N10D1-AQ
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DI040N10D1-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, DPAK, N, 100V, 40A, 17M, Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V Power Dissipation (Max): 37.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1192 pF @ 50 V Qualification: AEC-Q101 |
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DI040N10D1-AQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, DPAK, N, 100V, 40A, 17m, 175C, AEC-Q101 |
Produkt ist nicht verfügbar |
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| DI040N10D1-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 160A; 37.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 40A Pulsed drain current: 160A Power dissipation: 37.5W Case: DPAK; TO252AA On-state resistance: 38.6mΩ Mounting: SMD Gate charge: 15.5nC Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |