DI045N10PQ-AQ Diotec Semiconductor
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.94 EUR |
| 10+ | 3.08 EUR |
| 100+ | 1.85 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.76 EUR |
| 2500+ | 1.65 EUR |
| 5000+ | 1.39 EUR |
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Technische Details DI045N10PQ-AQ Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 39A, Pulsed drain current: 400A, Power dissipation: 40W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 9mΩ, Mounting: SMD, Gate charge: 56nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DI045N10PQ-AQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DI045N10PQ-AQ | Hersteller : Diotec Semiconductor |
 N-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 qualification |
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DI045N10PQ-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 39A Pulsed drain current: 400A Power dissipation: 40W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DI045N10PQ-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET PWRQFN 5X6 100V 0.0065OHM Packaging: Tape & Reel (TR) Mounting Type: Surface Mount FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A Power Dissipation (Max): 110W Supplier Device Package: PowerQFN 5x6 |
Produkt ist nicht verfügbar |
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DI045N10PQ-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 400A; 40W; QFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 39A Pulsed drain current: 400A Power dissipation: 40W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |