DI045N10PQ Diotec Semiconductor
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Technische Details DI045N10PQ Diotec Semiconductor
Description: MOSFET N-CH 100V 45A 8-POWERTDFN, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2551 pF @ 50 V.
Weitere Produktangebote DI045N10PQ
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DI045N10PQ | Hersteller : Diotec Semiconductor |
Description: MOSFET N-CH 100V 45A 8-POWERTDFNPackaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2551 pF @ 50 V |
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DI045N10PQ | Hersteller : Diotec Semiconductor |
MOSFETs |
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| DI045N10PQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 400A; 40W; PQFN5X6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Power dissipation: 40W Case: PQFN5X6 On-state resistance: 6.5mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 400A Gate charge: 56nC |
Produkt ist nicht verfügbar |

