DI045N10PT-AQ Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, N, 100 V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Qualification: AEC-Q101
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Technische Details DI045N10PT-AQ Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, N, 100 V,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V, Power Dissipation (Max): 54W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote DI045N10PT-AQ nach Preis ab 0.65 EUR bis 3.01 EUR
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DI045N10PT-AQ | Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 3x3, N, 100 V, 45 A, 9.5 m, 150C, AEC-Q101 |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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DI045N10PT-AQ | Diotec Semiconductor |
Description: MOSFET, POWERQFN 3X3, N, 100 V, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V Power Dissipation (Max): 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI045N10PT-AQ |
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Hersteller: Diotec Semiconductor
MOSFETs MOSFET, PowerQFN 3x3, N, 100 V, 45 A, 9.5 m, 150C, AEC-Q101
MOSFETs MOSFET, PowerQFN 3x3, N, 100 V, 45 A, 9.5 m, 150C, AEC-Q101
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.75 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.82 EUR |
| 1000+ | 0.8 EUR |
| 2500+ | 0.7 EUR |
| 5000+ | 0.65 EUR |
| DI045N10PT-AQ |
|
Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, N, 100 V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET, POWERQFN 3X3, N, 100 V,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 15A, 10V
Power Dissipation (Max): 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 11+ | 1.9 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.9 EUR |
| 2000+ | 0.83 EUR |