DI048N04PQ2-AQ Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET, POWERQFN 5X6, 40V, 48A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.89 EUR |
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Technische Details DI048N04PQ2-AQ Diotec Semiconductor
Description: MOSFET, POWERQFN 5X6, 40V, 48A,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V, Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TDSON-8-4, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DI048N04PQ2-AQ nach Preis ab 0.94 EUR bis 2.29 EUR
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DI048N04PQ2-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, POWERQFN 5X6, 40V, 48A, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| DI048N04PQ2-AQ | Hersteller : Diotec Semiconductor |
MOSFET, PowerQFN 5x6, 40V, 48A, N, 28W |
auf Bestellung 4700 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI048N04PQ2-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 200A Power dissipation: 22.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DI048N04PQ2-AQ | Hersteller : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 5x6, 40V, 48A, 150C, N, AEC-Q101 |
Produkt ist nicht verfügbar |
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| DI048N04PQ2-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 200A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 200A Power dissipation: 22.7W Case: QFN5x6 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |