DI048N04PQ2-AQ Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET 2N-CH 40V 48A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 8+ | 2.45 EUR |
| 12+ | 1.55 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.74 EUR |
| 2000+ | 0.72 EUR |
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Technische Details DI048N04PQ2-AQ Diotec Semiconductor
Description: MOSFET 2N-CH 40V 48A 8TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 27W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2270pF @ 20V, Rds On (Max) @ Id, Vgs: 9.6mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TDSON-8-4, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DI048N04PQ2-AQ nach Preis ab 0.61 EUR bis 2.53 EUR
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DI048N04PQ2-AQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 5x6, 40V, 48A, 150C, N, AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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