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DI048N04PT-AQ

DI048N04PT-AQ Diotec Semiconductor


Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, 40V, 48A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.68 EUR
Mindestbestellmenge: 5000
Produktrezensionen
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Technische Details DI048N04PT-AQ Diotec Semiconductor

Description: MOSFET, POWERQFN 3X3, 40V, 48A,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote DI048N04PT-AQ nach Preis ab 0.71 EUR bis 1.87 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DI048N04PT-AQ DI048N04PT-AQ Hersteller : Diotec Semiconductor Description: MOSFET, POWERQFN 3X3, 40V, 48A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.87 EUR
16+ 1.63 EUR
100+ 1.13 EUR
500+ 0.94 EUR
1000+ 0.8 EUR
2000+ 0.71 EUR
Mindestbestellmenge: 14
DI048N04PT-AQ Hersteller : Diotec Semiconductor di048n04pt.pdf MOSFET, PowerAEC-Q Qualified
Produkt ist nicht verfügbar
DI048N04PT-AQ Hersteller : DIOTEC SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 200A; 31W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 48.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DI048N04PT-AQ DI048N04PT-AQ Hersteller : Diotec Semiconductor di048n04pt-3324717.pdf MOSFET MOSFET, PowerQFN 3x3, 40V, 48A, 150C, N, AEC-Q101
Produkt ist nicht verfügbar
DI048N04PT-AQ Hersteller : DIOTEC SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 200A; 31W; QFN8
Mounting: SMD
Case: QFN8
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Gate charge: 48.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Drain-source voltage: 40V
Drain current: 48A
On-state resistance: 7.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 31W
Produkt ist nicht verfügbar