DI048N04PT-AQ Diotec Semiconductor
Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, 40V, 48A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET, POWERQFN 3X3, 40V, 48A,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.68 EUR |
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Technische Details DI048N04PT-AQ Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, 40V, 48A,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DI048N04PT-AQ nach Preis ab 0.71 EUR bis 1.87 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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DI048N04PT-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, POWERQFN 3X3, 40V, 48A, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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DI048N04PT-AQ | Hersteller : Diotec Semiconductor | MOSFET, PowerAEC-Q Qualified |
Produkt ist nicht verfügbar |
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DI048N04PT-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 200A; 31W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 48.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Drain-source voltage: 40V Drain current: 48A On-state resistance: 7.6mΩ Type of transistor: N-MOSFET Power dissipation: 31W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DI048N04PT-AQ | Hersteller : Diotec Semiconductor | MOSFET MOSFET, PowerQFN 3x3, 40V, 48A, 150C, N, AEC-Q101 |
Produkt ist nicht verfügbar |
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DI048N04PT-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 200A; 31W; QFN8 Mounting: SMD Case: QFN8 Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Gate charge: 48.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A Drain-source voltage: 40V Drain current: 48A On-state resistance: 7.6mΩ Type of transistor: N-MOSFET Power dissipation: 31W |
Produkt ist nicht verfügbar |