DI048N04PT-AQ DIOTEC SEMICONDUCTOR
Hersteller: DIOTEC SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 37.5W; QFN3X3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 37.5W
Case: QFN3X3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 48.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 138+ | 0.52 EUR |
| 207+ | 0.35 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.24 EUR |
| 2000+ | 0.22 EUR |
| 5000+ | 0.2 EUR |
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Technische Details DI048N04PT-AQ DIOTEC SEMICONDUCTOR
Description: MOSFET, POWERQFN 3X3, 40V, 48A,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DI048N04PT-AQ nach Preis ab 0.2 EUR bis 1.59 EUR
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DI048N04PT-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 37.5W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 200A Power dissipation: 37.5W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 48.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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DI048N04PT-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, POWERQFN 3X3, 40V, 48A, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4129 Stücke: Lieferzeit 10-14 Tag (e) |
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DI048N04PT-AQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 3x3, 40V, 48A, 150C, N, AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DI048N04PT-AQ | Hersteller : DIOTEC |
Description: DIOTEC - DI048N04PT-AQ - Leistungs-MOSFET, n-Kanal, 40 V, 48 A, 7600 µohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 48A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 37.5W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 7600µohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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DI048N04PT-AQ | Hersteller : DIOTEC |
Description: DIOTEC - DI048N04PT-AQ - Leistungs-MOSFET, n-Kanal, 40 V, 48 A, 7600 µohm, QFN, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 48A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 37.5W Anzahl der Pins: 8Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 7600µohm |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI048N04PT-AQ | Hersteller : Diotec Semiconductor |
MOSFET, PowerAEC-Q Qualified |
Produkt ist nicht verfügbar |
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DI048N04PT-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, POWERQFN 3X3, 40V, 48A, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 12A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2268 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |