DI050N04PT-AQ DIOTEC
Hersteller: DIOTECDescription: DIOTEC - DI050N04PT-AQ - Leistungs-MOSFET, n-Kanal, 40 V, 50 A, 0.0057 ohm, QFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 50A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 30W
Bauform - Transistor: QFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0057ohm
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 4900 Stücke:
Lieferzeit 14-21 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details DI050N04PT-AQ DIOTEC
Description: MOSFET, POWERQFN 3X3, 40V, 50A,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DI050N04PT-AQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DI050N04PT-AQ | Hersteller : Diotec Semiconductor |
MOSFET, PowerQFN 3x3, 40V, 50A, 0, 37W |
Produkt ist nicht verfügbar |
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DI050N04PT-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, POWERQFN 3X3, 40V, 50A, Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DI050N04PT-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, POWERQFN 3X3, 40V, 50A, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DI050N04PT-AQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 3x3, 40V, 50A, 150C, N, AEC-Q101 |
Produkt ist nicht verfügbar |