DI050N04PT-AQ Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET, POWERQFN 3X3, 40V, 50A,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-QFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4610 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 19+ | 0.96 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.44 EUR |
| 2000+ | 0.4 EUR |
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Technische Details DI050N04PT-AQ Diotec Semiconductor
Description: MOSFET, POWERQFN 3X3, 40V, 50A,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-QFN (3x3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V, Qualification: AEC-Q101.
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Preis |
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DI050N04PT-AQ | Hersteller : DIOTEC |
Description: DIOTEC - DI050N04PT-AQ - Leistungs-MOSFET, n-Kanal, 40 V, 50 A, 0.0057 ohm, QFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 30W Bauform - Transistor: QFN Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0057ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 4900 Stücke: Lieferzeit 14-21 Tag (e) |
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MOSFET, PowerQFN 3x3, 40V, 50A, 0, 37W |
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DI050N04PT-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 140A Power dissipation: 37W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 5000 Stücke |
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DI050N04PT-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET, POWERQFN 3X3, 40V, 50A, Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 10A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-QFN (3x3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3255 pF @ 25 V Qualification: AEC-Q101 |
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DI050N04PT-AQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, PowerQFN 3x3, 40V, 50A, 150C, N, AEC-Q101 |
Produkt ist nicht verfügbar |
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DI050N04PT-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 140A; 37W; QFN3X3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 140A Power dissipation: 37W Case: QFN3X3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
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