DI050N06D1-AQ Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: MOSFET DPAK N 60V 50A 0.0085OHM
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2323 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.80 EUR |
| 16+ | 1.12 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
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Technische Details DI050N06D1-AQ Diotec Semiconductor
Description: MOSFET DPAK N 60V 50A 0.0085OHM, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DI050N06D1-AQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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DI050N06D1-AQ | Hersteller : DIOTEC |
Description: DIOTEC - DI050N06D1-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 50 A, 0.011 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 65V rohsCompliant: Y-EX Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: TO-252AA (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.011ohm SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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DI050N06D1-AQ | Hersteller : DIOTEC |
Description: DIOTEC - DI050N06D1-AQ - Leistungs-MOSFET, n-Kanal, 65 V, 50 A, 0.011 ohm, TO-252AA (DPAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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N-Channel Power MOSFETN-Kanal Leistungs-MOSFETAEC-Q101 compliant |
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DI050N06D1-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 160A Power dissipation: 42W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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DI050N06D1-AQ | Hersteller : Diotec Semiconductor |
Description: MOSFET DPAK N 60V 50A 0.0085OHM Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DI050N06D1-AQ | Hersteller : Diotec Semiconductor |
MOSFETs MOSFET, DPAK, 60V, 50A, 150C, N, AEC-Q101 |
Produkt ist nicht verfügbar |
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DI050N06D1-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 30A Pulsed drain current: 160A Power dissipation: 42W Case: DPAK; TO252AA Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
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