Produkte > DIOTEC SEMICONDUCTOR > DI050N06D1
DI050N06D1

DI050N06D1 DIOTEC SEMICONDUCTOR

di050n06d1.pdf Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 42W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2042 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
71+1.02 EUR
139+ 0.51 EUR
154+ 0.46 EUR
201+ 0.36 EUR
213+ 0.34 EUR
Mindestbestellmenge: 71
Produktrezensionen
Produktbewertung abgeben

Technische Details DI050N06D1 DIOTEC SEMICONDUCTOR

Description: MOSFET, DPAK, 60V, 50A, 0, 42W, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 65 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V.

Weitere Produktangebote DI050N06D1 nach Preis ab 0.34 EUR bis 1.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DI050N06D1 DI050N06D1 Hersteller : DIOTEC SEMICONDUCTOR di050n06d1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 30A; Idm: 160A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 160A
Power dissipation: 42W
Case: DPAK; TO252AA
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2042 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
71+1.02 EUR
139+ 0.51 EUR
154+ 0.46 EUR
201+ 0.36 EUR
213+ 0.34 EUR
Mindestbestellmenge: 71
DI050N06D1 DI050N06D1 Hersteller : Diotec Semiconductor Description: MOSFET, DPAK, 60V, 50A, 0, 42W
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
auf Bestellung 2383 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.69 EUR
18+ 1.46 EUR
100+ 1.01 EUR
500+ 0.84 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 16
DI050N06D1 DI050N06D1 Hersteller : Diotec Semiconductor Description: MOSFET, DPAK, 60V, 50A, 0, 42W
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 825 pF @ 30 V
Produkt ist nicht verfügbar
DI050N06D1 DI050N06D1 Hersteller : Diotec Semiconductor MOSFET MOSFET, DPAK, 60V, 50A, 150C, N
Produkt ist nicht verfügbar