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DI068N03PQ-AQ

DI068N03PQ-AQ Diotec Semiconductor


di068n03pq.pdf
Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 5X6, 30V, 68A,
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.62 EUR
Mindestbestellmenge: 5000
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Technische Details DI068N03PQ-AQ Diotec Semiconductor

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6, Case: QFN5x6, Mounting: SMD, Application: automotive industry, Kind of package: reel; tape, Pulsed drain current: 210A, Drain current: 43A, Drain-source voltage: 30V, Gate charge: 79nC, On-state resistance: 4mΩ, Gate-source voltage: ±20V, Power dissipation: 25W, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of channel: enhancement.

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DI068N03PQ-AQ DI068N03PQ-AQ Hersteller : Diotec Semiconductor di068n03pq-2891838.pdf MOSFET MOSFET, PowerQFN 5x6, 30V, 68A, 150C, N, AEC-Q101
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DI068N03PQ-AQ DI068N03PQ-AQ Hersteller : DIOTEC SEMICONDUCTOR di068n03pq.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6
Case: QFN5x6
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: 210A
Drain current: 43A
Drain-source voltage: 30V
Gate charge: 79nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Power dissipation: 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH