DI068N03PQ-AQ Diotec Semiconductor
| Anzahl | Preis |
|---|---|
| 5000+ | 0.62 EUR |
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Technische Details DI068N03PQ-AQ Diotec Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6, Case: QFN5x6, Mounting: SMD, Application: automotive industry, Kind of package: reel; tape, Pulsed drain current: 210A, Drain current: 43A, Drain-source voltage: 30V, Gate charge: 79nC, On-state resistance: 4mΩ, Gate-source voltage: ±20V, Power dissipation: 25W, Type of transistor: N-MOSFET, Polarisation: unipolar, Kind of channel: enhancement.
Weitere Produktangebote DI068N03PQ-AQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DI068N03PQ-AQ | Hersteller : Diotec Semiconductor |
MOSFET MOSFET, PowerQFN 5x6, 30V, 68A, 150C, N, AEC-Q101 |
Produkt ist nicht verfügbar |
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DI068N03PQ-AQ | Hersteller : DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6 Case: QFN5x6 Mounting: SMD Application: automotive industry Kind of package: reel; tape Pulsed drain current: 210A Drain current: 43A Drain-source voltage: 30V Gate charge: 79nC On-state resistance: 4mΩ Gate-source voltage: ±20V Power dissipation: 25W Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhancement |
Produkt ist nicht verfügbar |

