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DI068N03PQ-AQ

DI068N03PQ-AQ Diotec Semiconductor


di068n03pq.pdf Hersteller: Diotec Semiconductor
Description: MOSFET, POWERQFN 5X6, 30V, 68A,
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.62 EUR
Mindestbestellmenge: 5000
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Technische Details DI068N03PQ-AQ Diotec Semiconductor

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 43A, Power dissipation: 25W, Case: QFN5x6, Gate-source voltage: ±20V, On-state resistance: 4mΩ, Mounting: SMD, Gate charge: 79nC, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 210A, Application: automotive industry, Anzahl je Verpackung: 5000 Stücke.

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DI068N03PQ-AQ Hersteller : Diotec Semiconductor di068n03pq.pdf MOSFET N Kanal
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DI068N03PQ-AQ DI068N03PQ-AQ Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9BF00E71451380C7&compId=di068n03pq.pdf?ci_sign=fc2ec28c9a43c035cf3d66e08fe6eb6852ba6e64 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 25W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 210A
Application: automotive industry
Anzahl je Verpackung: 5000 Stücke
Produkt ist nicht verfügbar
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DI068N03PQ-AQ DI068N03PQ-AQ Hersteller : Diotec Semiconductor di068n03pq-2891838.pdf MOSFET MOSFET, PowerQFN 5x6, 30V, 68A, 150C, N, AEC-Q101
Produkt ist nicht verfügbar
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DI068N03PQ-AQ DI068N03PQ-AQ Hersteller : DIOTEC SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB90B41EDB9BF00E71451380C7&compId=di068n03pq.pdf?ci_sign=fc2ec28c9a43c035cf3d66e08fe6eb6852ba6e64 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; Idm: 210A; 25W; QFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 25W
Case: QFN5x6
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 210A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH